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Tags
- RCAT
- finFET
- oxidation
- feol
- ion implantation
- high bandwidth memory
- 양자역학
- Punch through
- SOI MOSFET
- HBM
- 반도체소자
- doping
- effective mass
- Warpage
- 부피결함
- 반도체 8대공정
- 선결함
- Short Channel Effect
- Threshold Voltage
- SK하이닉스
- Silicon on Insulator
- DRAM
- Energy Band
- 반도체공학
- GIDL
- She
- Dynamic Random Access Memory
- 반도체공정
- MOSFET
- mechanism
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반도체 공부 기록
Tags
- 반도체소자
- MOSFET
- 반도체공학
- 반도체공정
- 반도체 8대공정
- Short Channel Effect
- She
- feol
- HBM
- SOI MOSFET
- Punch through
- Dynamic Random Access Memory
- oxidation
- DRAM
- mechanism
- 양자역학
- Warpage
- high bandwidth memory
- Silicon on Insulator
- RCAT
- GIDL
- Energy Band
- Threshold Voltage
- effective mass
- 부피결함
- 선결함
- ion implantation
- finFET
- SK하이닉스
- doping
- 점결함
- 동작원리
- defect
- 면접준비
- NAND
- DOS
- 삼성전자
- HBM 대안
- Process In Memory
- Compute eXpress Link
- Cu to Cu bonding
- Bump-less bonding
- Direct bonding
- Hybrid bonding
- Advanced MR-MUF
- MR-MUF
- TC-NCF
- core dram die
- logic die
- stacking fault
- disloaction
- 산화막 성질비교
- 산화막 특성
- 불순물 재분포
- 결정 방향
- diffusion controlled #reaction controlled
- 산화막 성장속도
- 웨이퍼 정보
- wafer inspection
- wafer 가공
- wafer fabrication
- floating zone
- wafer fabrication #czochralski
- Intrinsic Fermi-level
- Hole concentration
- Electron concentration
- Intrinsic state
- Fermi function
- Maxwell-Boltzmann approximation
- Fermi-Dirac probability fucntion
- 에너지 상태 밀도 함수
- Kronig-Penney model
- Step potential
- 계단형 전위
- 에너지 준위 양자화
- Infinite potential well
- 무한전위우물
- 양자역한
- 슈뢰딩거 파동방정식
- FZ법
- CZ법
- 면결함
- Photodetector
- T2SL
- 반도체소자개발
- i3system
- Rt-QFN
- LeadFrame
- HAESUNGDS
- STATSChipPAC
- JCET
- Vpass
- Cut-off
- Metal-Semiconductor-Oxide Field Effect Transistor
- 60mV/decade
- Subthreshold swing
- Channel length modulation
- 채널 변조 현상
- Roll-off
- Drain induced barrier lowering
- DIBL
- Retrograde doping
- Halo doping
- Lightly-doped drain
- Gate induced drain leakage
- Hot carrier injection
- Space charge density
- Substrate bias effect
- High-K Metal Gate
- Gate leakage
- Latch-up
- Parastric capacitance
- Junction capacitance
- Junction leakage
- Self-heating
- Elevated Source/Drain
- Kink effect
- Body contact
- Floating body effect
- Strain technology
- Recess Channel Array Transistor
- Multi-gate
- Ultra-thin body
- Advanced MOSFET
- Fin width
- Natural length
- GAAFET
- Fin profile
- Body angle
- Source/Dranin junction
- Back bias effect
- Corner effect
- 1T1C DRAM
- Pre-charge
- High-K material
- Stack DRAM
- Trench DRAM
- 3D capacitor
- Saddle MOSFET
- GAA junction-less DRAM
- Capacitor-less DRAM
- 1T DRAM
- 4T SRAM
- 10T SRAM
- 8T SRAM
- 6T SRAM
- Static Random Access Memory
- Body Effect
- Thermal Equilibrium
- Boltzmann Approximation
- Interposer
- 습식 산화
- 건식 산화
- Intrinsic carrier concentration
- fermi level
- 웨이퍼제조
- silicide
- MBCFET
- 반도체 전공정
- channeling effect
- LOCOS
- Wet Oxidation
- Dry Oxidation
- Deal-Grove Model
- Density of state
- 원자결합
- 에너지밴드
- 재료과학
- 산화공정
- 비정질
- 문턱전압
- 공정기술
- INVERTOR
- 반도체전공정
- 이온주입
- 다이아몬드 구조
- QLC
- 가우시안 분포
- 해성디에스
- SLF
- 입자성
- 아이쓰리시스템
- 비휘발성메모리
- CXL
- wafer
- ingot
- impact Ionization
- 스태츠칩팩코리아
- UTB
- 단결정
- HKMG
- Saturation
- 적외선 센서
- 마이크론
- imp
- 광전효과
- 다결정
- High-k
- SRAM
- TSMC
- TSV
- diffusion
- 웨이퍼
- Read
- Linear
- pim
- 도핑
- STi
- sense
- MLC
- SLC
- clm
- 확산
- NOR
- imperfection
- 파동성
- TLC
- Access
- ldd
- HCI
- refresh
- 결함
- 전위
- Restore
- SS
- SEED
- Write
- Elf